DMA30IM1600PZ single diode standard rectifier 4 1 3 part number DMA30IM1600PZ backside: cathode fav f vv 1.26 rrm 30 1600 = v= v i= a features / advantages: applications: package: planar passivated chips very low leakage current very low forward voltage drop improved thermal behaviour diode for main rectification for single and three phase bridge configurations to-263 (d2pak-hv) industry standard outline rohs compliant epoxy meets ul 94v-0 high creepage distance between terminals ixys reserves the right to change limits, conditions and dimensions. 20140226a data according to iec 60747and per semiconductor unless otherwise specified ? 2014 ixys all rights reserved
DMA30IM1600PZ v = v a2s a2s a2s a2s symbol definition ratings typ. max. i r v i a v f 1.29 r 0.7 k/w r min. 30 v rsm v 40 t = 25c vj t = c vj ma 1.5 v = v r t = 25c vj i = a f v t = c c 140 p tot 210 w t = 25c c r k/w 30 1600 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation conditions unit 1.60 t = 25c vj 150 v f0 v 0.82 t = c vj 175 r f 14.1 m ? v 1.26 t = c vj i = a f v 30 1.65 i = a f 60 i = a f 60 threshold voltage slope resistance for power loss calculation only a 150 v rrm v 1600 max. repetitive reverse blocking voltage t = 25c vj c j 10 j unction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 175 300 325 325 315 a a a a 255 275 450 440 1600 fav d = rectangular 0.5 average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 1700 0.25 ixys reserves the right to change limits, conditions and dimensions. 20140226a data according to iec 60747and per semiconductor unless otherwise specified ? 2014 ixys all rights reserved
DMA30IM1600PZ ratings product m a r k i n g date code part no. logo assembly code xxxxxxxxx ixys zyyww 000000 assembly line d m a 30 im 1600 pz part number diode standard rectifier (up to 1800v) single diode to-263ab (d2pak) (2hv) = = = current rating [a] reverse voltage [v] = = = = package t op c t vj c 175 virtual junction temperature -55 weight g 1.5 symbol definition typ. max. min. conditions operation temperature unit f c n 60 mounting force with clip 20 mm mm 4.2 4.7 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current 35 a per terminal 150 -55 terminal to terminal to-263 ( d2pak-hv ) delivery mode quantity code no. part number marking on product ordering DMA30IM1600PZ 515813 tape & reel 800 DMA30IM1600PZ standard t stg c 150 storage temperature -55 threshold voltage v 0.82 m ? v 0 max r 0 max slope resistance * 10.9 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 175 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20140226a data according to iec 60747and per semiconductor unless otherwise specified ? 2014 ixys all rights reserved
DMA30IM1600PZ w c2 a a1 c l a2 2x b2 e1 2x b h d1 supplier option 4 d2 e 2x e l1 d 3 1 e1 min max min max a 4.06 4.83 0.160 0.190 a1 a2 b 0.51 0.99 0.020 0.039 b2 1.14 1.40 0.045 0.055 c 0.40 0.74 0.016 0.029 c2 1.14 1.40 0.045 0.055 d 8.38 9.40 0.330 0.370 d1 8.00 8.89 0.315 0.350 d2 e 9.65 10.41 0.380 0.410 e1 6.22 8.50 0.245 0.335 e e1 h 14.61 15.88 0.575 0.625 l 1.78 2.79 0.070 0.110 l1 1.02 1.68 0.040 0.066 w typ. 0.02 0.040 typ. 0.0008 0.002 all dimensions conform with and/or within jedec standard. 2.3 0.091 2,54 bsc 0,100 bsc 4.28 0.169 dim. millimeter inches typ. 0.10 typ. 0.004 2.41 0.095 3.81 (0.150) 1.78 (0.07) 2.54 (0.100) 3.05 (0.120) 10.92 (0.430) 9.02 (0.355) mm (inches) recommended min. foot print 4 1 3 outlines to-263 (d2pak-hv) ixys reserves the right to change limits, conditions and dimensions. 20140226a data according to iec 60747and per semiconductor unless otherwise specified ? 2014 ixys all rights reserved
DMA30IM1600PZ 0.001 0.01 0.1 1 100 150 200 250 23456789 0 1 1 0 100 200 300 400 500 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 10 20 30 40 50 60 0102030 0 10 20 30 40 50 0 50 100 150 200 1 10 100 1000 10000 0.0 0.2 0.4 0.6 0.8 0 50 100 150 200 0 10 20 30 40 i f [a] v f [v] i fsm [a] t[s] i 2 t [a 2 s] t[ms] p tot [w] i f(av)m [a] t amb [c] i f(av)m [a] t c [c] z thjc [k/w] fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current fig. 3 i 2 t versus time per diode fig. 4 power dissipation vs. direct output current and ambient temperature fig. 5 max. forward current vs. case temperature fig. 6 transient thermal impedance junction to case t[ms] t vj = 25c t vj =150c t vj =45c 50 hz, 80% v rrm t vj =45c t vj = 150c v r =0v t vj = 125c 150c r thha : 0.6 k/w 0.8 k/w 1k/w 2k/w 4k/w 8k/w dc = 1 0.5 0.4 0.33 0.17 0.08 dc = 1 0.5 0.4 0.33 0.17 0.08 constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.03 0.0003 2 0.072 0.0065 3 0.131 0.027 4 0.367 0.105 5 0.1 0.8 rectifier ixys reserves the right to change limits, conditions and dimensions. 20140226a data according to iec 60747and per semiconductor unless otherwise specified ? 2014 ixys all rights reserved
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